1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 2000 fsye913a0d, fsye913a0r radiation hardened, segr resistant p-channel power mosfets the discrete products operation of intersil corporation has developed a series of radiation hardened mosfets speci?ally designed for commercial and military space applications. enhanced power mosfet immunity to single event effects (see), single event gate rupture (segr) in particular, is combined with 100k rads of total dose hardness to provide devices which are ideally suited to harsh space environments. the dose rate and neutron tolerance necessary for military applications have not been sacri?ed. the intersil portfolio of segr resistant radiation hardened mosfets includes n-channel and p-channel devices in a variety of voltage, current and on-resistance ratings. numerous packaging options are also available. this mosfet is an enhancement-mode silicon-gate power ?ld-effect transistor of the vertical dmos (vdmos) structure. it is specially designed and processed to be radiation tolerant. the mosfet is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. this type can be operated directly from integrated circuits. reliability screening is available as either commercial, txv equivalent of mil-s-19500, or space equivalent of mil-s-19500. contact intersil corporation for any desired deviations from the data sheet. formerly available as type ta17796. features 9a, -100v, r ds(on) = 0.280 ? total dose - meets pre-rad speci?ations to 100k rad (si) single event - safe operating area curve for single event effects - see immunity for let of 36mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 10v off-bias dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i dm photo current - 1.5na per-rad(si)/s typically neutron - maintain pre-rad speci?ations for 3e13 neutrons/cm 2 - usable to 3e14 neutrons/cm 2 symbol packaging smd.5 ordering information rad level screening level part number/brand 10k commercial fsye913a0d1 10k txv fsye913a0d3 100k commercial fsye913a0r1 100k txv fsye913a0r3 100k space fsye913a0r4 g d s data sheet february 2000 file number 4744
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d fsye913a0d, fsye913a0r units drain to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v ds -100 v drain to gate voltage (r gs = 20k ? ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v dgr -100 v continuous drain current t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 9a t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 5a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i dm 27 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gs 20 v maximum power dissipation t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 42 w t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 17 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 w/ o c single pulsed avalanche current, l = 100 h, (see test figure) . . . . . . . . . . . . . . . . . . . . . . i as 27 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i s 9a pulsed source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i sm 27 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c lead temperature (during soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l (distance >0.063in (1.6mm) from case, 10s max) 300 o c caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 1ma, v gs = 0v -100 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 1ma t c = -55 o c - - -7.0 v t c = 25 o c -2.0 - -6.0 v t c = 125 o c -1.0 - - v zero gate voltage drain current i dss v ds = -80v, v gs = 0v t c = 25 o c--25 a t c = 125 o c - - 250 a gate to source leakage current i gss v gs = 20v t c = 25 o c - - 100 na t c = 125 o c 200 na drain to source on-state voltage v ds(on) v gs = -12v, i d = 9a -3.02 v drain to source on resistance r ds(on)12 i d = 5a, v gs = -12v t c = 25 o c - 0.190 0.280 ? t c = 125 o c - - 0.440 ? turn-on delay time t d(on) v dd = -50v, i d = 9a, r l = 5.6 ? , v gs = -12v, r gs = 7.5 ? - - 20 ns rise time t r - - 40 ns turn-off delay time t d(off) - - 40 ns fall time t f - - 35 ns total gate charge q g(tot) v gs = 0v to -20v v dd = -50v, i d = 9a - - 61 nc gate charge at 12v q g(12) v gs = 0v to -12v - 36 41 nc threshold gate charge q g(th) v gs = 0v to -2v - - 2.4 nc gate charge source q gs - 6.6 7.8 nc gate charge drain q gd -1720nc plateau voltage v (plateau) i d = 9a, v ds = -15v - -7 - v input capacitance c iss v ds = -25v, v gs = 0v, f = 1mhz - 945 - pf output capacitance c oss - 315 - pf reverse transfer capacitance c rss - 100 - pf thermal resistance junction to case r jc - - 3.0 o c/w fsye913a0d, fsye913a0r
3 source to drain diode speci?ations parameter symbol test conditions min typ max units forward voltage v sd i sd = 9a -0.6 - -1.8 v reverse recovery time t rr i sd = 9a, di sd /dt = 100a/ s - - 170 ns electrical speci?ations up to 100k rad t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min max units drain to source breakdown volts (note 3) bv dss v gs = 0, i d = 1ma -100 - v gate to source threshold volts (note 3) v gs(th) v gs = v ds , i d = 1ma -2.0 -6.0 v gate to body leakage (notes 2, 3) i gss v gs = 20v, v ds = 0v - 100 na zero gate leakage (note 3) i dss v gs = 0, v ds = -80v - 25 a drain to source on-state volts (notes 1, 3) v ds(on) v gs = -12v, i d = 9a - -3.02 v drain to source on resistance (notes 1, 3) r ds(on)12 v gs = -12v, i d = 5a - 0.280 ? notes: 1. pulse test, 300 s max. 2. absolute value. 3. insitu gamma bias must be sampled for both v gs = -12v, v ds = 0v and v gs = 0v, v ds = 80% bv dss . single event effects (seb, segr) note 4 test symbol environment (note 5) applied v gs bias (v) (note 6) maximum v ds bias (v) ion species typical let (mev/mg/cm) typical range ( ) single event effects safe operating area seesoa ni 26 43 20 -100 br 37 36 10 -100 br 37 36 15 -80 br 37 36 20 -50 notes: 4. testing conducted at brookhaven national labs; sponsored by naval surface warfare center (nswc), crane, in. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. does not exhibit single event burnout (seb) or single event gate rupture (segr). typical performance curves unless otherwise speci?d figure 1. single event effects safe operating area figure 2. drain inductance required to limit gamma dot current to i as -120 -100 -80 -60 -40 -20 0 010152025 5 v ds (v) let = 37mev/mg/cm 2 , range = 36 fluence = 1e5 ions/cm 2 (typical) temp = 25 o c let = 26mev/mg/cm 2 , range = 43 v gs (v) -300 -100 -10 limiting inductance (henry) drain supply (v) -1000 ilm = 10a 300a 1e-4 1e-5 1e-6 -30 100a 30a 1e-3 1e-7 fsye913a0d, fsye913a0r
4 figure 3. maximum continuous drain current vs temperature figure 4. forward bias safe operating area figure 5. basic gate charge waveform figure 6. normalized r ds(on) vs junction temperature figure 7. normalized maximum transient thermal response typical performance curves unless otherwise speci?d (continued) i d , drain (a) t c , case temperature ( o c) 150 100 50 0 -50 0 10 2 4 6 8 12 10 1 0.1 i d , drain current (a) -10 -100 operation in this area may be limited by r ds(on) 100 s 10ms 1ms -300 v ds , drain to source voltage (v) -1 t c = 25 o c 100 charge q gd q g v g q gs basic gate charge waveform -12v 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 t j , junction temperature ( o c) normalized r ds(on) 2.5 pulse duration = 250ms, v gs = -12v, i d = 5a 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 normalized t, rectangular pulse duration (s) 1 thermal response (z jc ) 10 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc + t c single pulse 0.5 0.02 0.1 0.01 0.2 10 1 0.05 fsye913a0d, fsye913a0r
5 figure 8. unclamped inductive switching typical performance curves unless otherwise speci?d (continued) 10 1 110 40 0.1 i as , avalanche current (a) t av , time in avalanche (ms) 0.01 starting t j = 25 o c if r = 0 if r 0 t av = (l/r) ln [(i as *r) / (1.3 rated bv dss - v dd ) + 1] t av = (l) (i as ) / (1.3 rated bv dss - v dd ) starting t j = 150 o c test circuits and waveforms figure 9. unclamped energy test circuit figure 10. unclamped energy waveforms figure 11. resistive switching test circuit figure 12. resistive switching waveforms t p v gs 20v l + - v ds v dd dut vary t p to obtain required peak i as 0v 50 ? 50 ? 50v-150v i as + - electronic switch opens when i as is reached current transformer v dd v ds bv dss t p i as t av v dd r l v ds dut r gs 0v v gs = -12v t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on fsye913a0d, fsye913a0r
6 screening information screening is performed in accordance with the latest revision in effect of mil-s-19500, (screening information table). delta tests and limits (jantxv equivalent, jans equivalent) t c = 25 o c, unless otherwise speci?d parameter symbol test conditions max units gate to source leakage current i gss v gs = 20v 20 (note 7) na zero gate voltage drain current i dss v ds = 80% rated value 25 (note 7) a drain to source on resistance r ds(on) t c = 125 o c at rated i d 20% (note 8) ? gate threshold voltage v gs(th) i d = 1.0ma 20% (note 8) v notes: 7. or 100% of initial reading (whichever is greater). 8. of initial reading. screening information test jantxv equivalent jans equivalent gate stress v gs = -30v, t = 250 sv gs = -30v, t = 250 s pind optional required pre burn-in tests (note 9) mil-s-19500 group a, subgroup 2 (all static tests at 25 o c) mil-s-19500 group a, subgroup 2 (all static tests at 25 o c) steady state gate bias (gate stress) mil-std-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours mil-std-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours interim electrical tests (note 9) all delta parameters listed in the delta tests and limits table all delta parameters listed in the delta tests and limits table steady state reverse bias (drain stress) mil-std-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 160 hours mil-std-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 240 hours pda 10% 5% final electrical tests (note 9) mil-s-19500, group a, subgroup 2 mil-s-19500, group a, subgroups 2 and 3 note: 9. test limits are identical pre and post burn-in. additional screening tests parameter symbol test conditions max units safe operating area soa v ds = -80v, t = 10ms 1.2 a unclamped inductive switching i as v gs(peak) = -15v, l = 0.1mh 27 a thermal response ? v sd t h = 10ms; v h = -25v; i h = 1a 74 mv thermal impedance ? v sd t h = 100ms; v h = -25v; i h = 1a 165 mv fsye913a0d, fsye913a0r
7 rad hard data packages - intersil power transistors txv equivalent 1. rad hard txv equivalent - standard data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet d. group a - attributes data sheet e. group b - attributes data sheet f. group c - attributes data sheet g. group d - attributes data sheet 2. rad hard txv equivalent - optional data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet - precondition lot traveler - pre and post burn-in read and record data d. group a - attributes data sheet - group a lot traveler e. group b - attributes data sheet - group b lot traveler - pre and post read and record data for intermittent operating life (subgroup b3) - bond strength data (subgroup b3) - pre and post high temperature operating life read and record data (subgroup b6) f. group c - attributes data sheet - group c lot traveler - pre and post read and record data for intermittent operating life (subgroup c6) - bond strength data (subgroup c6) g. group d - attributes data sheet - group d lot traveler - pre and post rad read and record data class s - equivalents 1. rad hard ??equivalent - standard data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - hi-rel lot traveler - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. rad hard max. ??equivalent - optional data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - hi-rel lot traveler - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - hi-rel lot traveler - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - hi-rel lot traveler - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - hi-rel lot traveler - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - hi-rel lot traveler - pre and post radiation data fsye913a0d, fsye913a0r
8 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 fsye913a0d, fsye913a0r smd.5 3 pad ceramic leadless chip carrier d 1 e 1 e 2 d 2 b a d e 1 - gate 2 - source 3 - drain 1 2 3 symbol inches millimeters notes min max min max a 0.108 0.118 2.74 2.99 - b 0.090 0.100 2.28 2.54 - d 0.291 0.301 7.39 7.64 - d 1 0.281 0.291 7.13 7.39 - d 2 0.070 0.080 1.78 2.03 - e 0.395 0.405 10.03 10.28 - e 1 0.220 0.230 5.58 5.84 - e 2 0.120 0.130 3.04 3.30 - notes: 1. no current jedec outline for this package. 2. controlling dimension: inch. 3. revision 2 dated 11-99.
9 fsye913a0d, fsye913a0r
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